EMH1302 no.8721-1/4 tokyo office tokyo bldg., 1-10, 1 chome, ueno, taito-ku, tokyo, 110-8534 japan sanyo semiconductors data sheet 71006pa ms im tc-00000034 any and all sanyo semiconductor products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. consult with your sanyo semiconductor representative nearest you before usingany sanyo semiconductor products described or contained herein in such applications. sanyo semiconductor assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all sanyo semiconductor products described or contained herein. EMH1302 p-channel silicon mosfet general-purpose switching device applications features ? low on-resistance. ? 4v drive. specifications absolute maximum ratings at ta=25 c parameter symbol conditions ratings unit drain-to-source voltage v dss --30 v gate-to-source voltage v gss 20 v drain current (dc) i d -- 5 a drain current (pulse) i dp pw 10 m s, duty cycle 1% --20 a allowable power dissipation p d mounted on a ceramic board (1200mm 2 5 0.8mm) 1.5 w channel temperature tch 150 c storage temperature tstg --55 to +150 c electrical characteristics at ta=25 c ratings parameter symbol conditions min typ max unit drain-to-source breakdown voltage v (br)dss i d =--1ma, v gs =0v --30 v zero-gate voltage drain current i dss v ds =--30v, v gs =0v --1 m a gate-to-source leakage current i gss v gs = 16v, v ds =0v 10 m a cutoff voltage v gs (off) v ds =--10v, i d =--1ma --1.2 --2.6 v forward transfer admittance ? yfs ? v ds =--10v, i d =--2.5a 3.0 5.1 s r ds (on)1 i d =--2.5a, v gs =--10v 39 51 m w static drain-to-source on-state resistance r ds (on)2 i d =--1.5a, v gs =--4.5v 65 92 m w r ds (on)3 i d =--1.5a, v gs =--4v 74 115 m w input capacitance ciss v ds =--10v, f=1mhz 850 pf output capacitance coss v ds =--10v, f=1mhz 160 pf reverse transfer capacitance crss v ds =--10v, f=1mhz 135 pf turn-on delay time t d (on) see specified test circuit. 12 ns rise time t r see specified test circuit. 43 ns turn-off delay time t d (off) see specified test circuit. 80 ns fall time t f see specified test circuit. 45 ns marking : jb continued on next page. ordering number : en8721
EMH1302 no.8721-2/4 continued from preceding page. ratings parameter symbol conditions min typ max unit total gate charge qg v ds =--10v, v gs =--10v, i d =--5a 16.5 nc gate-to-source charge qgs v ds =--10v, v gs =--10v, i d =--5a 3.1 nc gate-to-drain miller charge qgd v ds =--10v, v gs =--10v, i d =--5a 3.1 nc diode forward voltage v sd i s =--5a, v gs =0v --0.85 --1.2 v package dimensions electrical connection unit : mm (typ) 7045-001 switching time test circuit pw=10 m s d.c. 1% p. g 50 w g s d i d = --2.5a r l =6 w v dd = --15v v out EMH1302 v in 0v --10v v in 1 : source 2 : source 3 : source 4 : gate 5 : drain 6 : drain 7 : drain 8 : drain sanyo : emh8 1 4 85 0.125 0.2 0.2 2.1 1.7 0.5 2.0 0.2 0.75 0.05 8765 123 4 top view 1 : source 2 : source 3 : source 4 : gate 5 : drain 6 : drain 7 : drain 8 : drain
EMH1302 no.8721-3/4 i s -- v sd source current, i s -- a diode forward voltage, v sd -- v ciss, coss, crss -- v ds ciss, coss, crss -- pf drain-to-source voltage, v ds -- v drain current, i d -- a ? y fs ? -- i d forward transfer admittance, ? y fs ? -- s r ds (on) -- v gs gate-to-source voltage, v gs -- v static drain-to-source on-state resistance, r ds (on) -- m w ambient temperature, ta -- c r ds (on) -- ta static drain-to-source on-state resistance, r ds (on) -- m w i d -- v gs drain current, i d -- a gate-to-source voltage, v gs -- v drain-to-source voltage, v ds -- v i d -- v ds drain current, i d -- a sw time -- i d switching time, sw time -- ns drain current, i d -- a 0 --0.5 --1.0 --1.5 --4.0 --2.5 --3.0 --3.5 --2.0 it11221 -- 6 -- 7 -- 8 -- 4 0 -- 1 -- 2 -- 3 -- 5 it11220 0 -- 5 -- 4 -- 3 -- 2 -- 1 --0.3 --0.2 --0.1 0 --0.4 --0.5 --0.6 --0.8 --0.7 --0.9 --1.0 --25 c 25 c ta=75 c v ds = --10v --3.0v --15.0v --4.5v --6.0v v gs = --2.5v --10.0v --4.0v --0.2 --0.4 --0.6 --0.8 --1.0 --1.2 it11225 --0.001 --0.01 2 3 5 7 2 --0.1 3 5 7 2 --1.0 3 5 7 2 --10 3 5 7 it11224 2 5 7 3 0.1 1.0 2 2 5 7 3 10 100 1000 3 5 7 5 7 2 5 3 2 5 3 2 --0.01 --0.1 725 3 --1.0 72 it11227 it11226 0 --10 --20 --5 --15 --25 --30 v ds = --10v 25 c 75 c ta= --25 c v gs =0v ta=75 c --25 c 25 c f=1mhz ciss crss coss v dd = --15v v gs = --10v t d (on) t d (off) 2 3 5 100 7 3 5 2 3 5 7 10 --0.1 23 57 --1.0 2 --10 357 it11223 it11222 0 160 140 120 100 40 20 80 60 0 --4 --8 --12 --16 --2 --6 --10 --14 ta=25 c 0 160 120 80 40 140 100 60 20 --60 20 120 80 40 140 100 60 0 --20 --40 160 i d = --2.5a, v gs = --10.0v i d = --1.5a, v gs = --4.5v --2.5a i d = --1.5a, v gs = --4.0v 5 3 --10 7 t r t f i d = --1.5a
EMH1302 no.8721-4/4 specifications of any and all sanyo semiconductor products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. to verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. sanyo semiconductor co., ltd. strives to supply high-quality high-reliability products. however, any and all semiconductor products fail with some probability. it is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. when designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. in the event that any or all sanyo semiconductor products (including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from the authorities concerned in accordance with the above law. no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of sanyo semiconductor co., ltd. any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. when designing equipment, refer to the "delivery specification" for the sanyo semiconductor product that you intend to use. information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. sanyo semiconductor believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. ps note on usage : since the EMH1302 is a mosfet product, please avoid using this device in the vicinity of highly charged objects. 0 0 0.2 0.4 0.6 0.8 1.2 1.0 1.4 1.5 1.6 20 40 60 80 100 120 140 160 it11230 it11228 0 --10 -- 7 -- 9 -- 8 -- 5 -- 4 -- 6 -- 1 -- 2 -- 3 012345678 10 911 17 13 12 15 16 14 v ds = --10v i d = --5a --0.1 --0.01 2 3 5 7 2 --1.0 3 5 7 2 it11229 --0.01 23 5 5 7 2357 2357 --0.1 --1.0 i dp = --20a operation in this area is limited by r ds (on). 1ms 10ms 100ms dc operation(ta=25 c) i d = --5a 100 m s 23 --10 --10 3 5 2 3 5 7 10 m s ambient temperature, ta -- c mounted on a ceramic board (1200mm 2 5 0.8mm) p d -- ta allowable power dissipation, p d -- w drain-to-source voltage, v ds -- v drain current, i d -- a ta=25 c single pulse mounted on a ceramic board (1200mm 2 5 0.8mm) total gate charge, qg -- nc v gs -- qg a s o gate-to-source voltage, v gs -- v this catalog provides information as of july, 2006. specifications and information herein are subject to change without notice.
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